收藏本站
Package Marking and Ordering Information
Device Marking
FDD050N03B
Device
FDD050N03B
Package
D-PAK
Reel Size
330mm
Tape Width
16mm
Quantity
2500
Electrical Characteristics T C = 25 o C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V, T C = 25 o C
30
-
-
V
Δ BV DS S
Δ T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, Referenced to
V DS = 24V, V GS = 0V
V GS = ±16V, V DS = 0V
25 o C
-
-
-
13
-
-
-
1
±100
mV/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10V, I D = 25A
V GS = 4.5V, I D = 15A
V DS = 5V, I D = 50A
1.25
-
-
-
2.0
3.7
5.2
169
3.0
5.0
8.1
-
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Q g(tot)
Q gs
Q gs2
Q gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V DS = 15V, V GS = 0V
f = 1MHz
V DD = 15V, I D = 50A
V GS = 10V
(Note 4)
-
-
-
-
-
-
-
2160
805
85
33
7.8
3.8
4.6
2875
1070
130
43
-
-
-
pF
pF
pF
nC
nC
nC
nC
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 15V, I D = 50A
V GS = 10V, R GEN = 4.7 Ω
(Note 4)
-
-
-
-
14.5
4.5
30
4.5
39
18
70
19
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
90*
360
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0V, I SD = 50A
V GS = 0V, I SD = 50A
dI F /dt = 100A/ μ s
-
-
-
-
33
19
1.3
-
-
V
ns
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, I AS = 12A, V DD = 27V, R G = 25 Ω , Starting T J = 25 ° C
3. I SD ≤ 50A, di/dt ≤ 200A/ μ s, V DD ≤ BV DSS , Starting T J = 25 ° C
4. Essentially Independent of Operating Temperature Typical Characteristics
5. When mounted on a 1 in 2 pad of 2 oz copper
?2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
2
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDD10AN06A0 MOSFET N-CH 60V 50A D-PAK
FDD13AN06A0 MOSFET N-CH 60V 50A D-PAK
FDD14AN06LA0_F085 MOSFET N-CH 60V 9.5A DPAK-3
FDD16AN08A0_F085 MOSFET N-CH 75V 50A DPAK
FDD16AN08A0_NF054 MOSFET N-CH 75V 50A DPAK
FDD18N20LZ MOSFET N-CH 200V DPAK-3
FDD2572_F085 MOSFET N-CH 150V 29A DPAK
FDD2582 MOSFET N-CH 150V 21A DPAK
相关代理商/技术参数
FDD05-12D 制造商:未知厂家 制造商全称:未知厂家 功能描述:DC-DC CONVERTER 5 ~ 6W
FDD05-12D0 制造商:CHINFA 制造商全称:Chinfa Electronics Ind. Co., Ltd. 功能描述:DC - DC CONVERTER 5~6W 5V INPUT MODEL
FDD05-12D1 制造商:未知厂家 制造商全称:未知厂家 功能描述:DC-DC CONVERTER 5 ~ 6W
FDD05-12D2 制造商:未知厂家 制造商全称:未知厂家 功能描述:DC-DC CONVERTER 5 ~ 6W
FDD05-12D3 制造商:未知厂家 制造商全称:未知厂家 功能描述:DC-DC CONVERTER 5 ~ 6W
FDD05-12D4 制造商:未知厂家 制造商全称:未知厂家 功能描述:DC-DC CONVERTER 5 ~ 6W
FDD05-12D5 制造商:未知厂家 制造商全称:未知厂家 功能描述:DC-DC CONVERTER 5 ~ 6W
FDD05-12S 制造商:未知厂家 制造商全称:未知厂家 功能描述:DC-DC CONVERTER 5 ~ 6W